1 elm34402aa - n 4 - g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction - to - a mbient steady-state r ja 5 0 c /w parameter symbol limit unit note drain - s ource voltage vds 3 0 v gate - s ource v oltag e vgs 20 v conti nuous drain current t a = 25 c id 8 a t a = 70 c 6 pulsed d rain current idm 32 a 3 power dissipation t c = 25 c pd 2.5 w t c = 70 c 1.6 j unction and storage temperature range tj , tstg - 55 to 150 c elm34402aa - n uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. ? vds = 3 0v ? id = 8 a ? rds (on) < 20 m (vgs = 10 v) ? rds (on) < 3 2 m (vgs = 4 .5v) single n-channel mosfet pin configuration c ircuit so p - 8 (top vi ew) pin no. pin name 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain s g d 4 3 2 1 5 6 7 8 t a = 25 c . u nless otherwise noted.
2 elm34402aa - n 4 - electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain - s ource breakdown voltage bvdss id = 25 0 a , vgs = 0v 3 0 v zero g ate voltage drain current idss vds = 24 v, vgs = 0v 1 a vds = 2 0 v, vgs = 0v, t a = 55 c 10 gate - b ody leakage current ig s s vds = 0v , vgs = 20 v 100 n a gate t hreshold voltage vg s( th) vds = vgs , id = 25 0 a 1.0 1.5 2.5 v on s tate drain current i d ( on ) vgs = 10 v, vds = 5v 8 a 1 static drain - s ource on - r esistance r d s (o n ) vgs = 10 v, i d = 8 a 17 20 m 1 vgs = 4 .5v, id = 6 a 26 32 m forward transconductance gfs vds =1 5v, id = 8 a 16 s 1 diode forward voltage vsd i f = 1a, vgs = 0v 1.1 v 1 max. body - d iode continuous c urrent is 2.3 a pulsed body - d iode c urrent ism 4.6 a 3 dynamic parameters input capacitance c iss vgs = 0v, vds = 15 v, f = 1mh z 1200 pf output capacitance c oss 220 pf reverse transfer capacitance c r ss 100 pf switching parameters total gate charge q g vgs = 4.5 v, vds = 15 v, id = 2 a 15.0 20.0 nc 2 gate - s ource charge q gs 5.8 nc 2 gate - d rain charge q gd 3.8 nc 2 turn - o n delay time t d (on) vgs = 10 v, vds = 15 v , id = 1 a rgen = 0.2 11 18 ns 2 turn - o n rise t ime t r 17 26 ns 2 turn - o ff delay time t d ( of f ) 37 54 ns 2 turn - o ff fall t ime t f 20 30 ns 2 body diode reverse recovery time t rr i f = 2.3 a, d if /dt=100a/ s 50 80 ns note : 1. pulsed width 300 sec and duty cycle 2%; 2. independent of operating temperature ; 3. pulsed width limited by maximum junction temperature. 4 . duty cycle 1 %. single n-channel mosfet t a = 25 c . u nless otherwise noted.
3 elm34402aa - n 4 - typical electrical and thermal characteristics 3 jul-25-2005 n-channel enhancement mode field effect transistor p2003bvg sop-8 lead-free niko-sem single n-channel mosfet
4 elm34402aa - n 4 - 4 jul-25-2005 n-channel enhancement mode field effect transistor p2003bvg sop-8 lead-free niko-sem maximum safe operating area i ,drain current( a ) single pulse v = 10v 10 d ? gs ds d s ( o n ) r l i m i t d c 1 0 0 s 1 s 1 0 s v ,drain - source voltage -1 0 10 1 10 2 10 0 10 1 10 2 10 10 -1 10 -2 1 m s 1 0 m s 1 0 0 m s r = 125 c/w ja t = 25 c a single n-channel mosfet
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